mar. 2003 mitsubishi fast recovery diode module RM600DY-66S high power switching use insulated type application 3-level inverters, 3-level converters, dc choppers. RM600DY-66S outline drawing & circuit diagram dimensions in mm i dc ................................................................ 600a v rrm ...................................................... 3300v insulated type 2-element in a pack hvdi (high voltage diode) module (c) (c) (e) (e) k2 circuit diagram a2 k1 a1 label 4-m8 nuts c ee c g e c k1 k2 a1 a2 57 0.25 57 0.25 20 124 0.25 140 130 114 5 38 18 61.5 15 30 40 6- 7 mounting holes
mar. 2003 mitsubishi fast recovery diode module RM600DY-66S high power switching use insulated type absolute maximum ratings (tj = 25 c) voltage class v rrm v rsm v r(dc) repetitive peak reverse voltage non-repetitive peak reverse voltage reverse dc voltage symbol item v v v unit a a a 2 s c c v n ?m n ?m kg i dc i fsm i 2 t t j t stg v iso output dc current surge (non-repetitive) forward current i 2 t for fusing junction temperature storage temperature isolation voltage mounting torque mass t c =25 c 1 cycle of half wave 60hz, peak value, non-repetitive, t j = 25 c start, v rm = 0v value of one cycle surge current, t w = 8.3ms, t j = 25 c start charged part to base plate, rms, sinusoidal, ac 60hz 1min. main terminals screw m8 mounting screw m6 typical value 600 4800 9.60 ? 10 4 ?0 ~ +150 ?0 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 1.5 symbol item conditions unit ratings 3.50 150 0.024 ma v s c k/w k/w repetitive reverse current forward voltage reverse recovery time reverse recovery charge termal resistance contact thermal resistance i rrm v fm t rr q rr r th(j-c) r th(c-f) v rrm applied, v rm = v rrm i fm = 600a i fm = 600a, d if /d t = ?200a/ s, v r = 1650v junction to case (per 1/2 module) case to fin, conductive grease applied (per 1/2 module) min typ max symbol item test conditions limits unit electrical characteristics (tj = 25 c) 4 4.55 1.20 0.048 66 3300 3300 2200 hvdi (high voltage diode) module
mar. 2003 mitsubishi fast recovery diode module RM600DY-66S high power switching use insulated type hvdi (high voltage diode) module 1500 0 300 600 900 1200 forward current ( a ) 0 300 400 200 100 v cc = 1650v, di f /dt = 1200a/ s t j = 125 c inductive load 012345 10 2 7 5 3 10 3 7 5 3 2 forward current (a) forward voltage (v) maximum forward characteristic 3 2 t j = 25 c 10 2 10 3 10 2 10 1 10 0 7 5 3 2 10 1 7 5 3 2 10 0 10 1 7 5 3 2 23 57 23 57 23 57 time ( s ) single pulse t c = 25 c r th(j c) = 0.048k/w z th(j c) ( c/w) maximum transient thermal impedance ( junction to case ) q rr ( c) reverse recovery characteristics vs. forward current ( typical ) di/dt ( a/ s ) q rr ( c) reverse recovery characteristics vs. ?i/dt ( typical ) 0 500 1000 1500 2000 2500 0 100 200 300 400 500 v cc = 1650v i f = 600a performance curves 81.563
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